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Dear Prof. ****,
I am a final year student of the four year
Bachelor of Technology (B.Tech.) program at the Indian
Institute Of Technology (IIT), Bombay, one of the nation's
premier engineering institutes. I will be graduating in June'96
with a degree in Electrical Engineering. I desire to pursue
higher studies in Electrical Engineering at ***, beginning fall
1997. I have received the application material and the list of
faculty from RPI, going through which I realised that your
research interests match with my desired area of specialisation.
Over the last two years in the Electrical
Engineering department I have developed a keen interest in
the field of Microelectronics : Design and technology of
ICs, Device simulation and solid state electronics. I have
made sincere efforts to make myself conversant in this field
through my regular course work as well as some extra workload. I
have supplemented my knowledge by reading various related
papers and articles and also by opting for an elective course in
'IC design and Technology'.
I am currently working on my B.Tech. Project ( 2 years
duration), titled "Simulation of Hot Carrier Degradation in
MOSFETs" , under the guidance of Prof. J. VASI and Prof.
AMITAVA DAS. The project involves development of a simulator
which can simulate channel carrier injection in short-channel
devices and calculate the charge build-up in the oxide and
threshold voltage shifts, by solving the basic device equations
in the MOS device. ( Please see the enclosed 'Research Summary'
for more details).
In my junior year, I presented a homepaper, which was based
on my extensive study of the various models for Hot Carrier
Degradation, substrate current and gate current calculation in
pMOSFETs, whose validity was later compared with experimental
results.
As a part of a fabricaton project, I am fabricating a 5
micron MOSFET device and Photovoltaic Diodes with planar
structure.
My ambition is to contribute in an original manner to the
field of Microelectronics, which I feel will be facilitated at
***, under your guidance. I request you to make a candid
assessment of my chances of securing admission alongwith full
financial aid in the form of fellowships, Research/Teaching
assistanships, to *** and whether I am deserving of the same as
per the standards at your university.
As a summer project, I wrote a program for Simulation of
Geological surfaces using Fractals. My work on this is going to
be published in two months.
I would be glad to send you any other information and
would welcome any suggestions you may like to offer. My E-mail
and postal addresses are given below.
Hope to hear from you and thankyou for your time and help.
Sincerely Yours,
Anand Inani
Email:- inani@ee.iitb.ernet.in
Encl :- 1) Research summary
2) Resume
3) Course Structure
Address:- Anand Inani
C-4/61, Rudrasagar,
ONGC Colony,
Bandra Reclamation,
Bandra(W)
Bombay - 400050
INDIA
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Research Summary
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Senior Year Dissertation
-----------------------------
TOPIC : Simulation of Hot Carrier Degradation in MOSFETs
Advisors : Prof. J. VASI,
Prof. AMITAVA DAS
Duration : July'95 - May'97 : 2 years
As a member of the Simulation group of the Microelectronics
section in the Electrical Engineering department, I am involved
with "MOS device simulation for Hot-Carrier Effects". We are
developing a simulator which solves Poisson, Continuity and Trap
rate equations in the oxide and Poisson & Continuity equations in
the substrate using Newton's method. To economise on simulation
time, a de-coupling strategy in separating the oxide and the
semiconductor has been evolved and emphasis is laid on the oxide.
Using the channel injection current as one of the boundary
conditions at the interface, we solve all the five transient
equations only in the oxide. "Lucky Electron/Hole Model" has been
succesfully implemented. Subsequently, I plan to study interface
state generation in the oxide in both PMOS as well as NMOS. I
also plan to implement electron and hole injection using other
models and compare the results obtained by the different methods.
The results which have been obtained so far, are highly
promising.
Homepaper
--------
TOPIC : Hot Carrier Degradation inMOSFETs
Advisors : Prof. Amitava Das
Prof.J. Vasi
Duration : July'95 - Nov'95
As part of my home paper, I did an extensive study on
Degradation of Hot Carrier Degradation. this included Gate
current Models such as Thermionic model, Lucky Electron Model and
a more recent model published in a paper in IEEE-ED'93. I also
studied Substrate current models which included a model published
in IEEE-ED'96 which is based upon the concept of what the authors
define E-hot. I plan to implement all of these in the simulator
and hence, compare the results as part of my Senior Year Thesis.
Summer Project
---------------
TOPIC : Characterisation of MOSFET's damaged by Radiation
Advisor : Prof. A. Das
Duration : May'95 - July'95
The project was a part of experimental verification of the
ongoing Device Simulator project. It involved the testing of the
effect of various doses of Gamma radiation on MOSFETs as seen by
the I-V characteristics of the transistor and the invertor
characteristics. It also involved finding the L and W of the
MOSFETs using the Scanning Electron Microscope. I also modeled
some of these effects using SPICE.
Summer Project
---------------
(At Regional Computer Centre, Oil and Natural Gas Corporation Ltd.)
TOPIC : Simulation of Geological Surfaces using FRACTALS
Duration : May'96 - July'96
I developed an interpolation software using Fractals. This
software, GeoSurf, gives more natural surfaces compared to any
other smoothening interpolator. This is now benig used to view
the surfaces generated from the available geological data at
O.N.G.C. My work was highly appreciated and is going to be
published in about two months.
Electronic Design Project
-------------------------
TOPIC : Voice Control of a D.C. Motor
Advisor : Prof. V.M.N Gadre
Duration : July'96 - Dec'96
Currently, we are designing a Voice Recognition circuit
which we subsequently will be used for controlling d.c. motors.
This uses the TMS32050 Texas Instruments Digital Signal
Processing Starter Kit. The prototype is expected to be ready by
the end of Oct'96.
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RESUME'
------
Name : Anand Inani
Address : C-4/61,
Rudrasagar,
O.N.G.C. Colony,
Bandra Reclamation,
Bandra(W),
Bombay - 400 050
INDIA
Academic Record
---------------
-> Ranked first in class throughout twelve years of
schooling.
-> Secured admission in I.I.T., reputed to be the best
institute for engineering studies in India, with a
rank of 460 out of approximately 100,000 students.
[99.7 percentile]
-> Record at I.I.T. : Ranked first after first year in a
class of 70 with a GPA of 3.74/4.00. Also ranked in
the top 5% in the institute.
-> My current GPA is 3.50/4.00 in a class of 70.
Academic Honors Received
------------------------
-> Awarded Schrader Duncan scholarship for outstanding
performance in the first year of B.Tech.
-> Scholarship and Certificate of merit awarded by the
Central Board of Secondary Education, for being among
the top 0.1% of the successful candidates appeared in
the Delhi Board Secondary School Examination, held in
1991.
-> Merit Certificate for obtaining 17th rank in the state
of Maharashtra in the Higher Secondary Certificate
(12th Grade) exam, held in 1993.
-> Merit scholarship at school for outstanding academic
performance.
Senior Year Dissertation
------------------------
( 2 years duration : July'95 - May'97 )
-> Simulation of Hot Carrier Degradation in MOS devices.
Fields of Interest
------------------
-> Microelectronics : Design and Technology of ICs (Analog
& VLSI), Numerical Device Simulation,
Solid state Circuits, Physics of
semiconductor devices.
Software Exposure
-----------------
-> I am conversant with C, C++ and FORTRAN.
-> I have worked on UNIX (X-Windows), LINUX, VAX, NOS/VE,
DEC-ALPHA, MACINTOSH and DOS based machines.
-> I am familiar with software packages like SPICE, MATLAB,
LaTeX etc..
G.R.E. (General) :- 2050
------
T.O.E.F.L. / T.W.E. :- To be taken.
-------------------
Work Experience
---------------
-> I have done two months Practical Training at Regional
Computer Centre, Oil and Natural Gas Corporation,
Bombay, India. I wrote a software, GeoSurf,
a Geological Surface Simulator using FRACTALS.
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COURSE STRUCTURE
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Course Name Grades Obtained
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PHYSICS :
Physics I A-
Physics II A+
Physics III B+
ELECTRONICS :
Basic Electric Circuits A-
*Network theory A+
Electronic Devices A-
Analog Circuits A-
Digital Circuits A-
Microprocessors B+
Control Systems B+
^R.F. Electronics _
~IC design and Technology _
COMMUNICATIONS :
Signals and systems A+
Communication systems B+
^Communication Systems Theory _
^Digital Signal Processing _
~Microwave and Optical Communications _
^ - Present semester courses, hence no evaluation as yet.
~ - To be taken in the next semester.
* - No laboratory support for these courses.
My G.P.A. in the above courses is 3.5/4.00.
Note :- This is not a complete list of courses
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